F1018 Datasheet

F1018 RF POWER VDMOS TRANSISTOR

Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features gold metal for greatly extended lifetime. Low output capacitan.

Features

gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance TM F1018 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 80 Watts Push - Pull Package Style AD HIGH EFFICIENCY, LINEAR, HIGH GAIN, LOW NOISE ABSOLUTE MAXIMUM RATINGS (TC = 25 C) Total Device Dissipation 290 Watts Junction to Case Thermal Resistance 0.6 o C/W Maximum Junction Temperature 200 o C Storage Temperature DC Drain Current Drain to Gate Voltage 70 V Drain to Source Voltage 70 V Gate to Source Voltage 30V o -65 o C to 150o C 12 A RF CHARACTERIS.