DatasheetsPDF.com

F1010ES

Power MOSFET
Part Number F1010ES
Manufacturer Power MOSFET
Description Power MOSFET
Published Jun 16, 2008
Detailed Description PD - 91720 IRF1010ES IRF1010EL l l l l www.DataSheet4U.com l l Advanced Process Technology Surface Mount (IRF1010ES) L...
Datasheet PDF File F1010ES PDF File

F1010ES
F1010ES

Overview
PD - 91720 IRF1010ES IRF1010EL l l l l www.
DataSheet4U.
com l l Advanced Process Technology Surface Mount (IRF1010ES) Low-profile through-hole (IRF1010EL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated G HEXFET® Power MOSFET D VDSS = 60V RDS(on) = 12mΩ Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The D2Pak is a s...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)