polyfet rf devices
General Description Silicon VDMOS and LDMOS
transistors designed specifically for broadband RF applications.
Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.
"Polyfet" process features gold metal for greatly extended lifetime.
Low output capacitance and high F t enhance broadband performance
TM
F1116
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS
TRANSISTOR 40 Watts Push - Pull Package Style AQ HIGH EFFICIENCY, LINEAR, HIGH GAIN, LOW NOISE
ABSOLUTE MAXIMUM RATINGS (TC = 25 C)
Total Device Dissipation 100 Watts Junction to Case Thermal Resistance 1.
5 o C/W Maximum Junction Tempe...