polyfet rf devices
General Description Silicon VDMOS and LDMOS
transistors designed specifically for broadband RF applications.
Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.
"Polyfet" process features gold metal for greatly extended lifetime.
Low output capacitance and high Ft enhance broadband performance
TM
F1170
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS
TRANSISTOR 200 Watts Gemini Package Style AH HIGH EFFICIENCY, LINEAR, HIGH GAIN, LOW NOISE
ABSOLUTE MAXIMUM RATINGS (TC = 25 C)
Total Device Dissipation 380 Watts Junction to Case Thermal Resistance 0.
45 o C/W Maximum Junction Temperatu...