polyfet rf devices
General Description Silicon VDMOS and LDMOS
transistors designed specifically for broadband RF applications.
Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.
TM "Polyfet" process features gold metal for greatly extended lifetime.
Low output capacitance and high Ft enhance broadband performance
Total Device Dissipation 380 Watts Junction to Case Thermal Resistance 0.
45 o C/W Maximum Junction Temperature 200 o C Storage Temperature
F1174
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS
TRANSISTOR 130 Watts Gemini Package Style AR HIGH EFFICIENCY, LINEAR, HIGH GAIN, LOW NOISE
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ABSO...