Part Number
|
EPA120E |
Manufacturer
|
ETC |
Description
|
High Efficiency Heterojunction Power FET |
Published
|
Mar 30, 2005 |
Detailed Description
|
Excelics
DATA SHEET
• • • • • • +29.5dBm TYPICAL OUTPUT POWER 9.5dB TYPICAL POWER GAIN AT 18GHz 0.3 X 1200 MICRON RECESS...
|
Datasheet
|
EPA120E
|
Overview
Excelics
DATA SHEET
• • • • • • +29.
5dBm TYPICAL OUTPUT POWER 9.
5dB TYPICAL POWER GAIN AT 18GHz 0.
3 X 1200 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION PROFILE PROVIDES EXTRA HIGH POWER EFFICIENCY, AND HIGH RELIABILITY Idss SORTED IN 30mA PER BIN RANGE
830 50 116 D D D
EPA120E
High Efficiency Heterojunction Power FET
D
48 320
40
S
G
S
G
S
G
S
G
S
100
95 45 80 Chip Thickness: 75 ± 13 microns All Dimensions In Microns
ELECTRICAL CHARACTERISTICS (Ta = 25 OC)
SYMBOLS P1dB G1dB PAE Idss Gm Vp BVgd BVgs Rth PARAMETERS/TEST CONDITIONS Output Power at 1dB Compression f=12GHz Vds=8V, Ids=50% Idss f=18GHz Gain at 1dB Compression f=12GHz Vds=8V, Id...
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