0.
5 – 12 GHz General Purpose Gallium Arsenide FET Technical Data
ATF-10736
Features
• High Associated Gain: 13.
0␣ dB Typical at 4␣ GHz • Low Bias: VDS = 2 V, IDS = 25␣ mA • High Output Power: 20.
0␣ dBm typical P 1 dB at 4␣ GHz • Low Noise Figure: 1.
2␣ dB Typical at 4␣ GHz • Cost Effective Ceramic Microstrip Package • Tape-and-Reel Packaging Option Available [1]
Description
The ATF-10736 is a high performance gallium arsenide
Schottkybarrier-gate field effect
transistor housed in a cost effective microstrip package.
Its noise figure makes this device appropriate for use in the gain stages of low noise amplifiers operating in the 0.
5-12 GHz frequency range.
This GaAs FET...