2–18 GHz Ultra Low Noise Pseudomorphic HEMT Technical Data
ATF-36077
Features
• PHEMT Technology • Ultra-Low Noise Figure: 0.
5 dB Typical at 12 GHz 0.
3 dB Typical at 4 GHz • High Associated Gain: 12 dB Typical at 12 GHz 17 dB Typical at 4 GHz • Low Parasitic Ceramic Microstrip Package • Tape-and-Reel Packing Option Available
Description
Hewlett-Packard’s ATF-36077 is an ultra-low-noise Pseudomorphic High Electron Mobility
Transistor (PHEMT), packaged in a low parasitic, surface-mountable ceramic package.
Properly matched, this
transistor will provide typical 12 GHz noise figures of 0.
5 dB, or typical 4 GHz noise figures of 0.
3 dB.
Additionally, the ATF-36077 has very low noise resistance, ...