M28F008 8 MBIT (1 MBIT x 8) FLASH MEMORY Y High-Density Symmetrically Blocked Architecture Sixteen 64 Kbyte Blocks Extended Cycling Capability 10K Block Erase Cycles Minimum 160K Block Erase Cycles per Chip Automated Byte Write and Block Erase Command User Interface Status Register System Performance Enhancements RY BY Status Output Erase Suspend Capability SRAM-Compatible Write Interface Y Very High-Performance Read 100 ns Maximum Access Time Hardware Data Protection Feature Erase Write Lockout during Power Transitions Industry Standard Packaging 40-Lead Sidebrazed DIP 42-Lead Flatpack ETOX TM Nonvolatile Flash Technology 12V Byte Write Block Erase Independent Software Vendor Support Mic...

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