Part Number
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M28F512 |
Manufacturer
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STMicroelectronics |
Description
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512 Kbit (64Kb x8 Bulk Erase) Flasxh Memory |
Published
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Apr 1, 2005 |
Detailed Description
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M28F512
512K (64K x 8, Chip Erase) FLASH MEMORY
FAST ACCESS TIME: 90ns LOW POWER CONSUMPTION
– Standby Current: 100µA ...
|
Datasheet
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M28F512
|
Overview
M28F512
512K (64K x 8, Chip Erase) FLASH MEMORY
FAST ACCESS TIME: 90ns LOW POWER CONSUMPTION
– Standby Current: 100µA Max 10,000 ERASE/PROGRAM CYCLES 12V PROGRAMMING VOLTAGE
TYPICAL BYTE PROGRAMING TIME 10µs (PRESTO F ALGORITHM)
ELECTRICAL CHIP ERASE in 1s RANGE
INTEGRATED ERASE/PROGRAM-STOP TIMER EXTENDED TEMPERATURE RANGES
32
1
PDIP32 (B)
PLCC32 (C)
DESCRIPTION
The M28F512 FLASH Memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte.
It is organised as 64K bytes of 8 bits.
It uses a command register architecture to select the operating modes and thus provides a simple microprocessor interface.
The M28F512 FLASH Memory is suitable...
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