SOT23
NPN SILICON PLANAR HIGH GAIN MEDIUM POWER
TRANSISTOR
ISSUE 1 – NOVEMBER 1997 FEATURES Very low equivalent on-resistance; RCE(sat)=140mΩ at 1.
25A COMPLEMENTARY TYPE – PARTMARKING DETAIL – FMMTL718 L68
FMMTL618
C B
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Pulse Current Base Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO IC ICM IB Ptot Tj:Tstg VALUE 60 20 5 1.
25 4 200 500 -55 to +150 UNIT V V V A A mA mW °C
FMMTL618
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown V...