SOT23
PNP SILICON PLANAR HIGH GAIN MEDIUM POWER
TRANSISTOR
ISSUE 1 – DECEMBER 1997 FEATURES Very low equivalent on-resistance; RCE(sat)=160mΩ at 1.
25A COMPLEMENTARY TYPE – PARTMARKING DETAIL – FMMTL617 L77
FMMTL717
C B
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Pulse Current Base Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO IC ICM IB Ptot Tj:Tstg VALUE -12 -12 -5 -1.
25 -4 -200 -500 -55 to +150 UNIT V V V A A mA mW °C
FMMTL717
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Brea...