PRELIMINARY DATA SHEET
FP100
HIGH PERFORMANCE PHEMT
• FEATURES ♦ 14 dBm P-1dB at 12 GHz ♦ 9 dB Power Gain at 12 GHz ♦ 3.
0 dB Noise Figure at 12 GHz
•
DESCRIPTION AND APPLICATIONS
DIE SIZE: 16.
5 x 16.
5 mils (420 x 420 µm) DIE THICKNESS: 3.
9 mils (100 µm typ.
) BONDING PADS: 3.
3 x 3.
5 mils (85 x 90 µm typ.
)
The FP100 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility
Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.
25 um by 100 um
Schottky barrier gate.
The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistances.
The FP100 features Si3N4 passivation.
Typical applications include general...