Ordering number:EN3962
FP103
PNP Epitaxial Planar Silicon
Transistor/ Composite
Schottky Barrier Diode
DC-DC Converter Applications
Features
· Composite type with a
PNP transistor and a Shottky barrier diode contained in one package, facilitating high-density mounting.
· The FP103 is formed with 2chips, one being equivalent to the 2SB1121 and the other the SB07-03C, placed in one package.
Package Dimensions
unit:mm 2088A
[FP103] 1:Base 2:Common 3:Emitter 4:Common 5:Anode 6:Common 7:Common (Common:Collcector, Cathode) SANYO:PCP4 (Bottom view)
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter [TR] Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage C...