Ordering number:EN5263
FP502
N-Channel Silicon MOSFET Silicon
Schottky Barrier Diode
DC-DC Converter Applications
Features
· Composite type with a high-speed N-channel MOSFET and a low-forward voltage
Schottky barrier diode contained in the PCP4 package, saving the mount space greatly.
Package Dimensions
unit:mm 2132
[FP502] 1:Source, Anode 2:Common (Drain, Cathode) 3:Source, Anode 4Common (Drain, Cathode) 5:Gate 6:Common (Drain, Cathode) 7:Common (Drain, Cathode) SANYO:PCP4 (Bottom view)
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Allowable Power Dissipation Storage Temperature [MOS block] Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current...