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Part Number
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FQA19N60 |
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Manufacturer
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Fairchild Semiconductor |
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Description
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600V N-Channel MOSFET |
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Published
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Apr 1, 2005 |
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Detailed Description
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FQA19N60 — N-Channel QFET® MOSFET
FQA19N60
N-Channel QFET® MOSFET
600 V, 18.5 A, 380 mΩ
April 2014
Description
This N...
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Datasheet
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FQA19N60
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Overview
FQA19N60 — N-Channel QFET® MOSFET
FQA19N60
N-Channel QFET® MOSFET
600 V, 18.
5 A, 380 mΩ
April 2014
Description
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.
This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength.
These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Features
• 18.
5 A, 600 V, RDS(on) = 380 mΩ (Max.
) @ VGS = 10 V, ID = 9.
3 A
• Low Gate Charge (Typ.
70 nC) • Low Crss (Typ.
35 pF) • 100% Avalanche...
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