FQA24N50 — N-Channel QFET® MOSFET
June 2014
FQA24N50
N-Channel QFET® MOSFET
500 V, 24 A, 200 mΩ
Features
• 24 A, 500 V, RDS(on) = 200 mΩ (Max.
) @ VGS = 10 V, ID = 12 A • Low Gate Charge (Typ.
90 nC) • Low Crss (Typ.
55 pF) • 100% Avalanche Tested • RoHS compliant
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switch mode power supply, power f...