FQA6N70
December 2000
QFET
FQA6N70
700V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation modes.
These devices are well suited for high efficiency switch mode power supply.
TM
Features
• • • • • • 6.
4A, 700V, RDS(on) = 1.
5 Ω @ VGS = 10 V Low gate charge ( typical 30 nC) Low Crss ( typical 15 pF) Fast switching 100% avalanche tested Improved dv/dt capability
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