FQB85N06 / FQI85N06
May 2001
QFET
FQB85N06 / FQI85N06
60V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for low voltage applications such as automotive, DC/ DC converters, and high efficiency switching for power management in portable and battery operated products.
D
TM
Features
• • • • • • • 85A, 60V, RDS(on) = 0.
010Ω @VGS = 10 V Low ...