FQD1P50 / FQU1P50
December 2000
QFET
FQD1P50 / FQU1P50
500V P-Channel MOSFET
General Description
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes.
These devices are well suited for electronic lamp ballasts based on the complementary half bridge topology.
TM
Features
• • • • • • -1.
2A, -500V, RDS(on) = 10.
5Ω @VGS = -10 V Low gate charge ( typical 11 nC) Low Crss ( typical 6.
0 pF) Fast switching 100% avalanche...