FQB19N10L / FQI19N10L
August 2000
QFET
FQB19N10L / FQI19N10L
100V LOGIC N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for low voltage applications such as high efficiency switching DC/DC converters, and DC motor control.
TM
Features
• • • • • • • 19A, 100V, RDS(on) = 0.
1Ω @VGS = 10 V Low gate charge ( typical 14 nC) Low Crss ( typical ...