FQB55N10 / FQI55N10
August 2000
QFET
FQB55N10 / FQI55N10
100V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.
D
TM
Features
• • • • • • • 55A, 100V, RDS(on) = 0.
026Ω @VGS = 10 V Low gate charge ( typical 75 nC) Low Crss...