QFET N-CHANNEL FQP1N60 FEATURES BVDSS = 600V • • • • • • • • Advanced New Design Avalanche Rugged Technology Rugged Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge: 5.
0nC (Typ.
) Extended Safe Operating Area Lower RDS(ON): 9.
3Ω (Typ.
) 1 2 3 RDS(ON) = 11.
5Ω ID = 1.
2A TO-220 1.
Gate 2.
Drain 3.
Source ABSOLUTE MAXIMUM RATINGS Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ, TSTG TL Characteristics Drain-to-Source Voltage Continuous Drain Current (TC = 25°C) Continuous Drain Current (TC = 100°C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode R...

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