FQP10N60C / FQPF10N60C — N-Channel QFET® MOSFET
November 2013
FQP10N60C / FQPF10N60C
N-Channel QFET® MOSFET
600 V, 9.
5 A, 730 mΩ
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to mini-mize on-state resistance, provide superior switching perfor-mance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high effi-ciency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
Features
• 9.
5 A, 600 V, RDS(on) = 730 mΩ (Max...