| Part Number | FQPF13N06 |
| Manufacturer | Fairchild Semiconductor |
| Title | 60V N-Channel MOSFET |
| Description | These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This a... |
| Features |
• • • • • • • 9.4A, 60V, RDS(on) = 0.135Ω @VGS = 10 V Low gate charge ( typical 5.8 nC) Low Crss ( typical 15 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G! GD S ! " " " TO-220F FQPF Series ! S Absolute Maximum Ratings Sym... |
| File Size | 660.44KB |
| Datasheet |
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FQPF13N06L : This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications. November 2013 Features • 10 A, 60 V, RDS(on) = 110 mΩ (Max.) @ VGS = 10 V, ID = 5 A • Low Gate Charge (Typ. 4.8 nC) • Low Crss (Typ. 17 pF) • 100% Avalanche Tested • 175°C Maximum Junction Temperature Rating D GDS TO-220F G S Absolute Maximum Rat.