FQPF4P40
August 2000
QFET
FQPF4P40
400V P-Channel MOSFET
General Description
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for electronic lamp ballast based on complimentary half bridge.
TM
Features
• • • • • • -2.
4A, -400V, RDS(on) = 3.
1Ω @VGS = -10 V Low gate charge ( typical 18 nC) Low Crss ( typical 11 pF) Fast switching 100% avalanche tested Improved dv/dt capability...