HY29F080 8 Megabit (1M x 8), 5 Volt-only, Flash Memory KEY FEATURES n 5 Volt Read, Program, and Erase – Minimizes system-level power requirements n High Performance – Access times as fast as 70 ns n Low Power Consumption – 15 mA typical active read current – 30 mA typical program/erase current – 5 µA maximum CMOS standby current n Compatible with JEDEC Standards – Package, pinout and command-set compatible with the single-supply Flash device standard – Provides superior inadvertent write protection n Sector Erase Architecture – Sixteen equal size sectors of 64K bytes each – A command can erase any combination of sectors – Supports full chip erase n Erase Suspend/Resume – Temporarily suspends...

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)