Part Number
|
HY51VS17403HG |
Manufacturer
|
Hynix Semiconductor |
Description
|
4M x 4Bit EDO DRAM |
Published
|
Apr 2, 2005 |
Detailed Description
|
HY51V(S)17403HG/HGL
4M x 4Bit EDO DRAM
PRELIMINARY
DESCRIPTION
The HY51V(S)17403HG/HGL is the new generation dynamic RA...
|
Datasheet
|
HY51VS17403HG
|
Overview
HY51V(S)17403HG/HGL
4M x 4Bit EDO DRAM
PRELIMINARY
DESCRIPTION
The HY51V(S)17403HG/HGL is the new generation dynamic RAM organized 4,194,304 words x 4bit.
HY51V(S)17403HG/HGL has realized higher density, higher performance and various functions by utilizing advanced CMOS process technology.
The HY51V(S)17403HG/HGL offers Extended Data Out PageMode as a high speed access mode.
Multiplexed address inputs permit the HY51V(S)17403HG/HGL to be packaged in standard 300mil 24(26)pin SOJ and 24(26) pin TSOP-II.
The package size provides high system bit densities and is compatible with widely available automated testing and insertion equipment.
System oriented features include single power supply 3.
...
Similar Datasheet