HY57V651620B 4 Banks x 1M x 16Bit Synchronous DRAM DESCRIPTION The Hynix HY57V641620HG is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth.
HY57V641620HG is organized as 4banks of 1,048,576x16.
H Y 5 7 V 6 4 1 6 2 0 H G i s o f f e r i n g f u l l y s y n c h r o n o u s o p e r a t i o n r e f e r e n c e d t o a p o s i t i v e e d g e o f t h e c l o c k .
A l l i n p u t s a n d o u t p u t s a r e s y nc h r o nized with the rising edge of the clock input.
The data paths are internally pipelined to achieve very high bandwidth.
All input and output voltage levels are compatible with LVTTL.
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