Power
Transistors
2SC4953
Silicon
NPN triple diffusion planar type
For high breakdown voltage high-speed switching
9.
9±0.
3
Unit: mm 4.
6±0.
2
2.
9±0.
2
3.
0±0.
5
■ Features
• High-speed switching
φ 3.
2±0.
1
15.
0±0.
5
• High collector-base voltage (Emitter open) VCBO
• Wide safe operation area
• Satisfactory linearity of forward current transfer ratio hFE • Dielectric breakdown voltage of the package: 5 kV
1.
4±0.
2 1.
6±0.
2
2.
6±0.
1
/ ■ Absolute Maximum Ratings Ta = 25°C
0.
8±0.
1
0.
55±0.
15
Parameter
Symbol Rating
Unit
e pe) Collector-base voltage (Emitter open) VCBO
500
13.
7±0.
2 4.
2±0.
2
Solder Dip
V
c e.
d ty Collector-emitter voltage (E-B short) VCES
500
V
n d stag tinue Col...