Power
Transistors
2SC4960
Silicon
NPN triple diffusion planar type
For power switching ■ Features
(0.
7)
15.
0±0.
3 11.
0±0.
2
Unit: mm 5.
0±0.
2
(3.
2)
21.
0±0.
5 15.
0±0.
2
• High-speed switching • High collector-base voltage (Emitter open) VCBO
φ 3.
2±0.
1
• Satisfactory linearity of forward current transfer ratio hFE • Full-pack package with outstanding insulation, which can be in-
stalled to the heat sink with one screw
2.
0±0.
2
2.
0±0.
1
/ ■ Absolute Maximum Ratings TC = 25°C
16.
2±0.
5 (3.
5)
Solder Dip
1.
1±0.
1
0.
6±0.
2
Parameter
Symbol Rating
Unit
e pe) Collector-base voltage (Emitter open) VCBO
900
V
c e.
d ty Collector-emitter voltage (E-B short) VCES
900
V
n d stag tinue Collec...