TOSHIBA
Transistor Silicon
NPN Epitaxial Planar Type
2SC5322FT
2SC5322FT
VHF~UHF Band Low Noise Amplifier Applications
Unit: mm
• Low noise figure: NF = 1.
4dB (f = 2 GHz) • High gain: |S21e|2 = 10dB (f = 2 GHz)
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range
Symbol
VCBO VCEO VEBO
IC IB PC Tj Tstg
Rating
8 5 1.
5 10 5 100 125 −55~125
Unit
V V V mA mA mW °C °C
Microwave Characteristics (Ta = 25°C)
JEDEC
―
JEITA
―
TOSHIBA
2-1B1A
Weight: 0.
0022 g (typ.
)
Characteristics Transition frequency Insertion gain
Noise...