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2SC5422


Part Number 2SC5422
Manufacturer Toshiba Semiconductor
Title NPN TRANSISTOR
Description 2SC5422 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5422 HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV HIGH ...
Features e Time Fall Time YMBOL ICBO IEBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE (sat) fT Cob tstg tf TEST CONDITION VCB = 1700 V, IE = 0 VEB = 5 V, IC = 0 IC = 10 mA, IB = 0 VCE = 5 V, IC = 2 A VCE = 5 V, IC = 11 A IC = 11 A, IB = 2.75 A IC = 11 A, IB = 2.75 A VCE = 10 V, IC = 0.1 A VCB = 10 V, IE = 0, f ...

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2SC5420 : Ordering number : EN5762 NPN Triple Diffused Planar Silicon Transistor 2SC5420 Inverter Lighting Applications Features • High breakdown voltage (VCBO=1000V). • High reliability (Adoption of HVP process). • Adoption of MBIT process. Package Dimensions unit: mm 2069B-SMP-FD [2SC5420] 10.2 4.5 1.3 8.8 1.2 0.8 1 2 3 2.7 0.4 3.0 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions 2.55 2.55 Tc=25°C Ratings 1000 450 9 5 10 1.75 50 150 –55 to +150.

2SC5421 : 2SC5421 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5421 HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS l High Voltage l Low Saturation Voltage : VCBO = 1500 V : VCE (sat) = 3 V (Max.) Unit: mm MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC Collector−Base Voltage Collector−Emitter Voltage Emitter−Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range DC Pulse SYMBOL VCBO VCEO VEBO IC ICP IB PC Tj Tstg RATING 1500 600 5 15 30 7.5 180 150 −55~150 UNIT V V V A A W °C °C JEDEC JEITA TOSHIBA ― ― 2-21F2A Weight: 9.75 g (typ.) ELECTRICAL CHARACTERISTICS (Tc = 25°C).

2SC5423 : Power Transistors 2SC5423 Silicon NPN triple diffusion mesa type For horizontal deflection output 15.5±0.5 4.5 Unit: mm q q q High breakdown voltage, and high reliability through the use of a glass passivation layer High-speed switching Wide area of safe operation (ASO) (TC=25˚C) Ratings 1700 1700 600 5 30 15 10 100 3.5 150 –55 to +150 Unit V V V V A A A W ˚C ˚C 10.0 s Features φ3.2±0.1 5° 26.5±0.5 3.0±0.3 5° 23.4 22.0±0.5 2.0 1.2 5° 18.6±0.5 5° 5° s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25°C dissipation Ta=25°C Junction temperature.




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