2SC5518

2SC5511 : 2SC5511 Transistors www.datasheet4u.com For Audio Amplifier output - TV Velosity Modulation (160V, 1.5A) 2SC5511 zExternal dimensions (Unit : mm) TO-220FN 10.0 zStructure NPN Silicon Epitaxial Planar Transistor 4.5 φ3.2 2.8 zFeatures 1) Electrical characteristics of DC current gain hFE is flat. 2) High breakdown voltage. (BVCEO=160V(Min.), at IC=1mA) 3) High fT. (Typ. 150MHz, at VCE=10V, IE= −0.2A, f=100MHz) 4) Wide SOA. (1)Base (2)Collector (3)Emitter 15.0 12.0 8.0 5.0 1.2 1.3 14.0 0.8 2.54 (1) (2) (3) 2.54 0.75 2.6 zApplications Power amplifier Velosity modulation zAbsolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base vol.

2SC5513 : Power Transistors 2SC5513 Silicon NPN triple diffusion mesa type For horizontal deflection output 15.5±0.5 4.5 Unit: mm q q q High breakdown voltage, and high reliability through the use of a glass passivation layer High-speed switching Wide area of safe operation (ASO) (TC=25˚C) Ratings 1500 1500 600 5 20 11 3.5 40 3 150 –55 to +150 Unit V V V V A A A W ˚C ˚C 10.0 s Features φ3.2±0.1 5° 26.5±0.5 3.0±0.3 5° 23.4 22.0±0.5 2.0 1.2 5° 18.6±0.5 5° 5° s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25°C dissipation Ta=25°C Junction temperature S.

2SC5514 : Power Transistors 2SC5514 Silicon NPN triple diffusion mesa type For horizontal deflection output 15.5±0.5 4.5 Unit: mm q q q High breakdown voltage, and high reliability through the use of a glass passivation layer High-speed switching Wide area of safe operation (ASO) (TC=25˚C) Ratings 1500 1500 600 5 23 13 5 50 3.5 150 –55 to +150 Unit V V V V A A A W ˚C ˚C 10.0 s Features φ3.2±0.1 5° 26.5±0.5 3.0±0.3 5° 23.4 22.0±0.5 2.0 1.2 5° 18.6±0.5 5° 5° s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25°C dissipation Ta=25°C Junction temperature S.

2SC5515 : Power Transistors 2SC5515 Silicon NPN triple diffusion mesa type For horizontal deflection output 15.5±0.5 4.5 Unit: mm q q q High breakdown voltage, and high reliability through the use of a glass passivation layer High-speed switching Wide area of safe operation (ASO) (TC=25˚C) Ratings 1500 1500 600 5 27 17 8 65 3 150 –55 to +150 Unit V V V V A A A W ˚C ˚C 10.0 s Features φ3.2±0.1 5° 26.5±0.5 3.0±0.3 5° 23.4 22.0±0.5 2.0 1.2 5° 18.6±0.5 5° 5° s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25°C dissipation Ta=25°C Junction temperature Sto.

2SC5516 : Power Transistors 2SC5516 Silicon NPN triple diffusion mesa type For horizontal deflection output 15.5±0.5 4.5 Unit: mm q q q High breakdown voltage, and high reliability through the use of a glass passivation layer High-speed switching Wide area of safe operation (ASO) (TC=25˚C) Ratings 1500 1500 600 5 30 20 8 70 3.5 150 –55 to +150 Unit V V V V A A A W ˚C ˚C 10.0 s Features φ3.2±0.1 5° 26.5±0.5 3.0±0.3 5° 23.4 22.0±0.5 2.0 1.2 5° 18.6±0.5 5° 5° s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25°C dissipation Ta=25°C Junction temperature S.

2SC5516 : ·High Breakdown Voltage ·High Switching Speed ·Low Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Character display horizontal deflection output ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous 20 A ICM Collector Current- Continuous 30 A IB Base Current- Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 8 A 70 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn 1 .

2SC5517 : Power Transistors 2SC5517 Silicon NPN triple diffusion mesa type For horizontal deflection output 15.5±0.5 φ 3.2±0.1 Unit: mm 3.0±0.3 5˚ 5˚ (4.5) 26.5±0.5 (2.0) (1.2) (10.0) (23.4) 22.0±0.5 I Features • High breakdown voltage, and high reliability through the use of a glass passivation layer • High-speed switching • Wide area of safe operation (ASO) 5˚ (4.0) 5˚ 2.0±0.2 5˚ / 1.1±0.1 0.7±0.1 I Absolute Maximum Ratings TC = 25°C 5.45±0.3 e ) Parameter Symbol Rating Unit 18.6±0.5 (2.0) Solder Dip c type Collector to base voltage VCBO 1 700 V 3.3±0.3 5.5±0.3 n d ge. ed Collector to emitter voltage VCES 1 700 (2.0) V sta tinu Emitter to base voltage VEBO 7 V .

2SC5517 : ·High Breakdown Voltage- ：VCBO= 1700V (Min) ·High Switching Speed ·Wide Area of Safe Operation ·Built-in Damper Diode ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1700 V VCES Collector-Emitter Voltage 1700 V VEBO Emitter-Base Voltage 7 V IC Collector Current- Continuous 6 A ICM Collector Current- Peak 12 A IB Base Current- Continuous Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 3 A 3 W 40.

2SC5519 : Power Transistors 2SC5519 Silicon NPN triple diffusion mesa type For horizontal deflection output 15.5±0.5 4.5 Unit: mm q q q High breakdown voltage, and high reliability through the use of a glass passivation layer High-speed switching Wide area of safe operation (ASO) (TC=25˚C) Ratings 1700 1700 5 16 8 3 50 3 150 –55 to +150 Unit V V V A A A W ˚C ˚C 10.0 s Features φ3.2±0.1 5° 26.5±0.5 3.0±0.3 5° 23.4 22.0±0.5 2.0 1.2 5° 18.6±0.5 5° 5° s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage te.