Power
Transistors
2SD1535
Silicon
NPN triple diffusion planar type Darlington
For high power amplification
0.
7±0.
1 10.
0±0.
2 5.
5±0.
2 2.
7±0.
2 4.
2±0.
2 4.
2±0.
2
Unit: mm
s Features
q q q q
Extremely satisfactory linearity of the forward current transfer ratio hFE High collector to base voltage VCBO Wide area of safe operation (ASO) Full-pack package which can be installed to the heat sink with one screw (TC=25˚C)
Ratings 500 400 12 14 7 0.
5 50 2 150 –55 to +150 Unit V V V A A A W ˚C ˚C
7.
5±0.
2
16.
7±0.
3
φ3.
1±0.
1
4.
0
1.
4±0.
1
1.
3±0.
2
14.
0±0.
5
Solder Dip
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector curr...