Power
Transistors
2SD1752, 2SD1752A
Silicon
NPN epitaxial planar type
For power amplification and low-voltage switching Complementary to 2SB1148 and 2SB1148A
q q q q q
7.
0±0.
3 3.
0±0.
2 3.
5±0.
2
Unit: mm
Low collector to emitter saturation voltage VCE(sat) High-speed switching Satisfactory linearity of foward current transfer ratio hFE Large collector current IC I type package enabling direct soldering of the radiating fin to the printed circuit board, etc.
of small electronic equipment.
(TC=25˚C)
Ratings 40 50 20 40 5 20 10 15 1.
3 150 –55 to +150 Unit V
7.
2±0.
3
0.
8±0.
2
s Features
1.
1±0.
1
0.
85±0.
1 0.
4±0.
1
1.
0±0.
2
10.
0 –0.
+0.
3
0.
75±0.
1
2.
3±0.
2 4.
6±0.
4 1 2 3
s Absolute Maximum Rati...