Power
Transistors
2SD1964
Silicon
NPN epitaxial planar type
For power switching
Unit: mm
0.
7±0.
1
s Features
q q q q
10.
0±0.
2 5.
5±0.
2 2.
7±0.
2 4.
2±0.
2 φ3.
1±0.
1 1.
4±0.
1
4.
2±0.
2
Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current transfer ratio hFE Large collector current IC Full-pack package which can be installed to the heat sink with one screw (TC=25˚C)
Ratings 130 80 7 25 15 50 2 150 –55 to +150 Unit V V V A A W ˚C ˚C
Solder Dip
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature
Sy...