Power
Transistors
2SD1985, 2SD1985A
Silicon
NPN triple diffusion planar type
For power amplification Complementary to 2SB1393 and 2SB1393A
s Features
0.
7±0.
1
Unit: mm
10.
0±0.
2 5.
5±0.
2 2.
7±0.
2 4.
2±0.
2 φ3.
1±0.
1 1.
4±0.
1 1.
3±0.
2 0.
8±0.
1 0.
5 +0.
2 –0.
1 2.
54±0.
25 5.
08±0.
5 1 2 3 4.
2±0.
2
q q q
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to 2SD1985 2SD1985A 2SD1985 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
(TC=25˚C)
Ratings 60 80 60 80 6 5 3 25 2 150 –55 to +150 Unit
14.
0±0.
5
emitter voltage 2SD1985A Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature
V V A A W ˚C ˚C
S...