Transistor
2SD1996
Silicon
NPN epitaxial planer type
For low-voltage output amplification For muting For DC-DC converter
Unit: mm
6.
9±0.
1
0.
15
0.
7
4.
0
1.
05 2.
5±0.
1 (1.
45) ±0.
05 0.
8
s Features
q q q q
0.
65 max.
14.
5±0.
5 0.
45–0.
05
+0.
1
Low collector to emitter saturation voltage VCE(sat).
Low ON resistance Ron.
High foward current transfer ratio hFE.
Allowing supply with the radial taping.
(Ta=25˚C)
Ratings 25 20 12 1 0.
5 600 150 –55 ~ +150 Unit V V V A A mW ˚C ˚C
0.
45–0.
05 2.
5±0.
5 1 2 2.
5±0.
5 3
+0.
1
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage...