Transistor
2SD2457
Silicon
NPN epitaxial planer type
For low-frequency power amplification
Unit: mm
s Features
q q q
4.
5±0.
1 1.
6±0.
2
1.
5±0.
1
1.
0–0.
2
+0.
1
High collector to emitter voltage VCEO.
Large collector power dissipation PC.
Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.
2.
6±0.
1
0.
4max.
45°
0.
4±0.
08 0.
5±0.
08 1.
5±0.
1
4.
0–0.
20
0.
4±0.
04
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
*
3.
0±0.
15
(Ta=25˚C)
Rati...