Transistor
2SD2459
Silicon
NPN epitaxial planer type
For low-frequency output amplification
Unit: mm
s Features
q q q
4.
5±0.
1 1.
6±0.
2
1.
5±0.
1
1.
0–0.
2
+0.
1
High collector to emitter voltage VCEO.
Low collector to emitter saturation voltage VCE(sat).
Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.
2.
6±0.
1
0.
4max.
45°
0.
4±0.
08 0.
5±0.
08 1.
5±0.
1 3.
0±0.
15
4.
0–0.
20
0.
4±0.
04
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
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