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RF MOSFET Power
Transistor, 6OW, 12V 2 - 175 MHz
Features
N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Bipolar Devices Specifically Designed for 12 Volt Applications
DU1260T
v2.
00
Absolute Maximum Ratings at 25°C
Electrical Characteristics
at 25°C
Specifications
Subject to Change Wiihout Notice.
M/A-COM,
inc.
Tel.
(800) 366-2266 Fax (800) 618-8883
n
North America:
Asia/Pacific:
Tel.
+81 (03) 3226-1671 Fax +81 (03) 3226-1451
n
Europe:
Tel.
+44 (1344) 869 595 Fax +44 (1344) 300 020
RF MOSFET Power
Transistor, 6OW, 12V
DU1260T
VZDO
Typical Broadband...