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Part Number
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KM416C1000B |
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Manufacturer
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Samsung semiconductor |
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Description
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1M x 16Bit CMOS Dynamic RAM with Fast Page Mode |
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Published
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Apr 4, 2005 |
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Detailed Description
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KM416C1000B, KM416C1200B KM416V1000B, KM416V1200B
1M x 16Bit CMOS Dynamic RAM with Fast Page Mode
DESCRIPTION
CMOS DRAM...
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Datasheet
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KM416C1000B
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Overview
KM416C1000B, KM416C1200B KM416V1000B, KM416V1200B
1M x 16Bit CMOS Dynamic RAM with Fast Page Mode
DESCRIPTION
CMOS DRAM
This is a family of 1,048,576 x 16 bit Fast Page Mode CMOS DRAMs.
Fast Page Mode offers high speed random access of memory cells within the same row.
Power supply voltage (+5.
0V or +3.
3V), refresh cycle (1K Ref.
or 4K Ref.
), access time (-5,-6 or -7), power consumption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features of this family.
All of this family have CASbefore-RAS refresh, RAS-only refresh and Hidden refresh capabilities.
Furthermore, Self-refresh operation is available in L-version.
This 1Mx16 Fast Page Mode DRAM family is fabricated usin...
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