Part Number
|
KM416C4104C |
Manufacturer
|
Samsung semiconductor |
Description
|
4M x 16bit CMOS Dynamic RAM with Extended Data Out |
Published
|
Apr 4, 2005 |
Detailed Description
|
KM416C4004C, KM416C4104C
CMOS DRAM
4M x 16bit CMOS Dynamic RAM with Extended Data Out
DESCRIPTION
This is a family of ...
|
Datasheet
|
KM416C4104C
|
Overview
KM416C4004C, KM416C4104C
CMOS DRAM
4M x 16bit CMOS Dynamic RAM with Extended Data Out
DESCRIPTION
This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs.
Extended Data Out Mode offers high speed random access of memory cells within the same row.
Refresh cycle(4K Ref.
or 8K Ref.
), access time (-5 or -6) are optional features of this family.
All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities.
This 4Mx16 EDO Mode DRAM family is fabricated using Samsung′s advanced CMOS process to realize high band-width, low power consumption and high reliability.
FEATURES
• Part Identification - KM416C4004C(5.
0V, 8K Ref.
) - KM416C4104C(5.
0V, 4K ...
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