Part Number
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KM416S1120D |
Manufacturer
|
ETC |
Description
|
512K x 16bit x 2 Banks Synchronous DRAM LVTTL |
Published
|
Apr 4, 2005 |
Detailed Description
|
KM416S1120D
CMOS SDRAM
1M x 16 SDRAM
512K x 16bit x 2 Banks Synchronous DRAM LVTTL
Revision 1.4 June 1999
Samsung El...
|
Datasheet
|
KM416S1120D
|
Overview
KM416S1120D
CMOS SDRAM
1M x 16 SDRAM
512K x 16bit x 2 Banks Synchronous DRAM LVTTL
Revision 1.
4 June 1999
Samsung Electronics reserves the right to change products or specification without notice.
-1-
Rev.
1.
4 (Jun.
1999)
KM416S1120D
Revision History
Revision 1.
4 (June, 10th 1999)
CMOS SDRAM
• AC values of tRCD/tRP/tRAS/tRC are returned to the number of clock cycles.
Those can be also converted to ns-unit based values by multiplying the number of clock cycles and clock cycle time of each part together.
Accordingly, - Changed tRCD and tRP of KM416S1120D-7/8 each from 18ns to 21ns/20ns - Changed tRC of KM416S1120D-7/8 each from 67ns/68ns to 70ns - Changed tRC of KM416S1120D-6 from 66n...
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