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KSB1017

Part Number KSB1017
Manufacturer Fairchild Semiconductor
Description PNP Silicon Epitaxial Transistor
Published Apr 5, 2005
Detailed Description KSB1017 KSB1017 Power Amplifier Applications • Complement to KSD1408 1 TO-220F 1.Base 2.Collector 3.Emitter PNP Sil...
Datasheet KSB1017





Overview
KSB1017 KSB1017 Power Amplifier Applications • Complement to KSD1408 1 TO-220F 1.
Base 2.
Collector 3.
Emitter PNP Silicon Epitaxial Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter VCBO VCEO VEBO IC IB PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Dissipation ( TC=25°C) Junction Temperature Storage Temperature Value - 80 - 80 -5 -4 - 0.
4 25 150 - 55 ~ 150 Units V V V A A W °C °C Electrical Characteristics TC=25°C unless otherwise noted Symbol Parameter Test Condition BVCEO ICBO IEBO hFE1 hFE2 VCE(sat) VBE(on) fT Cob Collector-Emitter Breakdown Voltage Collector Cut-o...






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