Part Number | KSC2003 |
Manufacturer | Samsung semiconductor |
Title | NPN Epitaxial Silicon Transistor |
Description | ... |
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File Size | 109.30KB |
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KSC2001 : .
KSC2001 : KSC2001 KSC2001 General Purpose Applications • High hFE and Low VCE (sat) 1 TO-92 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Value 30 25 5 700 150 600 150 -55 ~ 150 Units V V V mA mA mW °C °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol VBE (on) ICBO IEBO hFE1 hFE2 VCE (sat) VBE (sat) Cob fT Parameter * Base Emitter On Voltage Collector Cut-off Current Emitter Cut-off Curren.
KSC2002 : .