KSC2335
KSC2335
High Speed, High Voltage Switching
• Industrial Use
NPN Epitaxial Silicon
Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol VCBO V CEO VEBO IC ICP IB PC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Base Current (DC) Collector Dissipation (Ta=25°C) Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature
1
TO-220 2.
Collector 3.
Emitter
1.
Base
Value 500 400 7 7 15 3.
5 1.
5 40 150 - 55 ~ 150
Units V V V A A A W W °C °C
* PW≤300µs, Duty Cycle≤10%
Electrical Characteristics TC=25°C unless otherwise noted
Symbol VCEO(sus) VCEX(sus)1 VCEX(sus...