KSC5019
KSC5019
Low Saturation
• VCE(sat)=0.
5V at IC=2A, IB=50mA
1
TO-92
1.
Emitter 2.
Collector 3.
Base
NPN Epitaxial Silicon
Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol VCBO VCES VCEO VEBO IC ICP IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) * Collector Current (Pulse) Base Current Collector Power Dissipation Junction Temperature Storage Temperature Value 30 30 10 6 2 5 2 750 150 -55 ~ 150 Units V V V V A A A mW °C °C
* PW≤10ms, Duty Cycle≤30%
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol ICBO IEBO BVCEO BVEBO hFE1 hFE2 VCE (sat) VBE (on) ...