KSE210
KSE210
Feature
• Low Collector-Emitter Saturation Voltage • High Current Gain Bandwidth Product : fT=65MHz@IC= -100mA (Min.
) • Complement to KSE200
1
TO-126
1.
Emitter 2.
Collector 3.
Base
PNP Epitaxial Silicon
Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCBO VCEO VEBO IC PC TJ TSTG
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature
Value - 40 - 25 -8 -5 15 150 - 65 ~ 150
Units V V V A W °C °C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCEO ICBO
IEBO hFE1 hFE2 hFE3 VCE(sat)
...